Journal
JOURNAL OF CRYSTAL GROWTH
Volume 227, Issue -, Pages 51-55Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)00631-5
Keywords
computer simulation; growth models; mass transfer; surface processes; molecular beam epitaxy; semiconducting III-V materials
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We simulate the surface shapes during homoepitaxial overgrowth of patterned GaAs substrates in the sector (0 0 1)(111)A. The model for the shape evolution is based on a diffusion equation in which the orientation-dependent parameters vary according to a simple model of the surface free energy of the zineblende crystal structure. Metastable pseudofacets its well as the initial shape of the step are demonstrated to play a major role in the evolution of the surface during overgrowth. (C) 2001 Elsevier Science B.V. All rights reserved.
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