New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions

A new procedure is proposed to extract basic parameters for the AIM-Spice amorphous thin film transistor model in the above-threshold region. Our method avoids non-linear optimization, which is mainly the method utilized up to now. when using a program extractor included in AIM-Spice. The present extraction procedure is based on the integration of the experimental data current. The integration method as in known is convenient to decrease the effects of experimental noise. The method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. The accuracy of the simulated curves using the parameters extracted with the new procedure is verified with measured and calculated data using the expressions contained in the model. (C) 2001 Elsevier Science Ltd. All rights reserved.