Effect of stress on dopant and defect diffusion in Si: A general treatment

We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P. H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to two examples in Si: (1) a vacancy, including Jahn-Teller distortions, and (2) a B-I pair. Both are predicted to show isotropic diffusion for (100) grown uniaxially strained film, but strong anisotropic diffusion for (111) films.