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JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 2, Pages 813-818Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1378337
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Using spectroscopic ellipsometry and Raman spectroscopy, we measured the pseudodielectric function and the phonon frequencies of fluorinated nanocrystalline carbon (nc-C:F) thin films grown on silicon substrate at varying growth temperature and gas flux ratio of CH4 and CF4. Utilizing the Tauc-Lorentzian formula, we performed multilayer analysis to estimate the dielectric function of the fluorinated nanocrystalline carbon thin films. We also adopted Gaussian-like density-of-states model proposed by Demichelis [Phys. Rev. B 45, 14364 (1992)] and estimated the amplitude A, the transition energy E-pi, and the broadening sigma (pi) of pi --> pi* transitions. Based on this model, we explained the change of the optical gap and the refractive index in terms of the change of the amplitude A rather than the shift of transition energy E-pi of pi --> pi* transitions. Raman and ellipsometric study suggested that the average size of nanocrystallites in the fluorinated carbon thin films was smaller than that of amorphous hydrogenated carbon films studied by Hong [Thin Solid Films 352, 41 (1999)]. (C) 2001 American Institute of Physics.
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