Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 3, Pages 365-367Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1385588
Keywords
-
Categories
Ask authors/readers for more resources
The high-injection lifetime and surface recombination parameters have been investigated in as-grown 4H and 6H-SiC epilayers subjected to various process treatments. A depth-resolved optical transient absorption technique was utilized to evaluate the influence of film thickness and surface treatment on carrier lifetime. We demonstrate that besides polishing and ion implantation, both natural and thermal oxidation may also result in lifetime reduction due to enhanced surface losses. Moreover, a long-term stability test has revealed a substantial degradation of lifetime characteristics, consistent with a spontaneous surface oxidation and slow relaxation of SiO2/SiC interface states. We show that for common film thickness < 100 mum, the effective lifetime is dominated by surface leakage, which is found, generally, to be higher in 4H compared to 6H-SiC. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available