Journal
PHYSICAL REVIEW E
Volume 64, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevE.64.026219
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Pattern formation in semiconductor heterostructures is studied on the basis of a spatially two-dimensional model of reaction-diffusion type. In particular, we investigate the neighborhood of a codimension-two Turing-Hopf instability by analytical methods. Amplitude equations are derived which predict the absence of mixed modes but extended ranges of bistability between homogeneous oscillatory states and hexagonal Turing patterns. Our results are confirmed by numerical simulations. The features are not confined to a neighborhood of the bifurcation point so that the conclusions of the weakly nonlinear analysis explain the observations in large portions of the parameter space at least qualitatively.
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