Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 40, Issue 8, Pages 4903-4906Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.4903
Keywords
epitaxial lateral overgrowth; MOCVD; EBIC; Si substrate; lifetime
Categories
Ask authors/readers for more resources
In this paper. we report on the fabrication and characterizations of a GaAs-based laser using the epitaxial lateral overgrowth (ELO) technique. ELO is an epitaxial growth technique capable of yielding low -dislocation-density III-V films on Si. To realize the effectivity of this procedure, two types of lasers were fabricated by changing the positions of the top p(+)-GaAs and metal contact in-line with the ELO layer and in-line with the line seed region. The longer lifetime for the lasers with the top p(+)-GaAs and metal contact in-line with the ELO layer proves the suitability of the ELO technique.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available