Journal
IEEE ELECTRON DEVICE LETTERS
Volume 22, Issue 8, Pages 405-406Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.936358
Keywords
insulated gate FETs; MOS devices; semiconductor device modeling; silicon on insulator technology
Categories
Ask authors/readers for more resources
This paper describes computer simulations of various SOI MOSFETs with double and triple gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide thereby called a II-gate or Pi-gate MOSFET) is introduced. The proposed device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
