Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume 14, Issue 3, Pages 207-213Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/66.939815
Keywords
contact stress; fluid pressure; wafer-scale planarity
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Mechanical interactions, such as contact stress and fluid pressure are of extreme importance in silicon wafer polishing, especially for the wafer-scale planarity of the finished surfaces. In this paper, the measurements of interfacial fluid pressure and friction, as well as their dependence on some major process variables, are presented. A nonuniform subambient fluid pressure was measured, and the resulting wafer/pad contact stress, obtained by combining the effects of both applied normal load and interfacial fluid pressure, is determined. An analytical model was developed to predict the magnitude and distribution of the interfacial fluid pressure. The results of polishing experiments show good evidence of the effects of this subambient fluid pressure on with in-wafer nonuniformity (WIWNU). By properly designing the polishing process variables, the fluid pressure may be tailored, and a relatively uniform material removal can be achieved.
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