Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 48, Issue 8, Pages 1655-1660Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.936584
Keywords
grain boundary; lateral crystallization; nickel; polycrystalline silicon; thin-film transistor
Ask authors/readers for more resources
A distinct grain boundary (GB) is formed when two crystallization fronts collide in metal-induced laterally crystallized (MLC) polycrystalline silicon (poly-Si) thin films. This has been used to study carrier transport across a single dominant GB, The average number of traps per unit area is found to be about 1.6 x 10(12)/cm(2) in this GB, significantly higher than that associated with the regular GBs in the bulk of MILC poly-Si, Though this single GB occupies a negligible fraction of the total device volume, it has been found to significantly affect both the resistance of MILC resistors and the leakage current of MILC thin-film transistors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available