Journal
PHYSICAL REVIEW LETTERS
Volume 87, Issue 6, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.87.066803
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Spin injection across heterojunctions plays a decisive role in the new field of spintronics. Within the ballistic transport regime, we state a general expression for the spin-injection rate in a heterojunction made of two ballistic electrodes. Both the spin-orbit interaction and interface scattering effect are taken into account. Our model is consistent with the well-documented results of ferromagnetic-metal junctions. It explains the recent experimental results of a dilute-magnetic-semiconductor/semiconductor junction and predicts solutions to enhance the spin-injection rate across a ferromagnetic-semiconductor junction.
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