Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 7, Pages 943-945Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1394173
Keywords
-
Categories
Ask authors/readers for more resources
The photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the I-V properties of the ZnO/Si heterojunctions were investigated at different annealing temperatures and atmospheres. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. It is concluded that the green emission corresponds to the local level composed by oxide antisite defect O-Zn rather than oxygen vacancy V-O, zinc vacancy V-Zn, interstitial zinc Zn-i, and interstitial oxygen O-i. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available