Journal
JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 4, Pages 1710-1717Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1384856
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Defect formation in compound semiconductors such as GaAs under ion irradiation is not as well understood as in Si and Ge. We show how a combination of ion range calculations and molecular dynamics computer simulations can be used to predict the atomic-level damage structures produced by MeV ions. The results show that the majority of damage produced in GaAs both by low-energy self-recoils and 6 MeV He ions is in clusters, and that a clear majority of the isolated defects are interstitials. Implications of the results for suggested applications are also discussed. (C) 2001 American Institute of Physics.
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