Journal
PHYSICAL REVIEW B
Volume 64, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.64.073101
Keywords
-
Ask authors/readers for more resources
Recent experiments in the two-dimensional electron systems in silicon metal-oxide-semiconductor field effect transistors have shown that the in-plane magnetic field H-sat required to saturate the conductivity to its high-field value, and the magnetic field H-s needed to completely align the spins of the electrons, are comparable. By small-angle Shubnikov-de Haas oscillation measurements that allow separate determinations of the spin-up and spin-down subband populations, we show to an accuracy 5% that H-sat H-s.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available