Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 8, Pages 1124-1126Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1394718
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Threshold voltage instabilities of all-organic thin-film transistors are investigated as a function of stress time and stress bias. The dominant effect is a positive threshold shift for negative gate bias stress which is explained by mobile ions drifting in the insulator when a gate field is applied. Trapping of charge carriers at the semiconductor-insulator interface plays only a minor role. Furthermore, we investigate the stress behavior of a basic logic element, an inverter. In comparison to a single transistor, we observe improved stability which arises from partial compensation of the parametric shifts during operation. (C) 2001 American Institute of Physics.
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