4.5 Article

A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding

Journal

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 10, Issue 3, Pages 392-399

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/84.946791

Keywords

activation energy; aluminuni/(silicon)-glass bonding; hermetic MEMS package; localized heating; reliability

Ask authors/readers for more resources

A hermetic package based on localized aluminuni/silicon-to-glass bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-mum-wide polysilicon on-chip microheaters can raise the temperature of the bonding region to 700 degreesC bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128 degreesC. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available