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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 40, Issue 9B, Pages 5803-5805Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.5803
Keywords
Bi4Ti3O12 thin film; SXES; valence band; hybridization effect; soft-X-ray Raman scattering
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The electronic structure of a ferroelectric Bi4Ti3O12 (BIT) thin film was investigated by soft-X-ray emission spectroscopy (SXES). In the valence band energy region, Ti 3d and O 2p partial density of states were observed in O Is and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the 0 2p state. This finding indicates that the 0 2p state strongly hybridizes with the Ti 3d state in the valence band.
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