Journal
JOURNAL OF CRYSTAL GROWTH
Volume 230, Issue 3-4, Pages 537-543Publisher
ELSEVIER
DOI: 10.1016/S0022-0248(01)01305-7
Keywords
nitrides; semiconducting III-V materials; detectors
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AlxGa1-xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal-semiconductor-metal photodiodes, p-n junction photodetectors and photo transistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date. (C) 2001 Elsevier Science B.V. All rights reserved.
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