Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 37, Issue 5, Pages 1383-1393Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/28.952514
Keywords
device modeling; electromagnetic interference; parasitic components; pulsewidth-modulated inverter; soft switching; time-domain reflectometry
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For the study of electromagnetic interference (EMI) mechanisms in pulsewidth-modulated inverters, this paper presents an analysis approach based on empirical models of the inverter components and their associated various parasitics. The power switching devices were modeled with a physics-based device modeling technique. Using time-domain reflectometry, we characterized the major parasitics in the device modules, passive components, cables, leads, and interconnects. Simulations of a full-bridge insulated gate bipolar transistor inverter were then carried out in the time domain under hard-switching and zero-voltage switching conditions. The simulated EMI spectra were compared with the experimental counterparts with the separation of common-mode and differential-mode EMI The comparisons verified the validity of the proposed modeling approach over most of the EMI frequency range. Also discussed in the paper are the soft-switching effects on the inverter's EMI.
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