Journal
PHYSICAL REVIEW B
Volume 64, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.64.125304
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Valence-band dispersions in Ga1-xMnxAs along the Gamma-Delta -X line (k parallel to [001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
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