Generation-recombination noise of DX centers in AlN:Si

Generation-recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation-recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined. (C) 2001 American Institute of Physics.