Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 16, Pages 2588-2590Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1410336
Keywords
-
Categories
Ask authors/readers for more resources
A strained InGaN contact layer inserted between Pd/Au and p-type GaN resulted in low ohmic contact resistance without any special treatments. The thickness and In mole fraction of the p-type InGaN varied from 2 nm to 15 nm and from 0.14 to 0.23, respectively. Strained InGaN layers are effective in reducing the contact resistance. A contact layer of 2 nm thick strained In0.19Ga0.81N showed the lowest specific contact resistance of 1.1x10(-6) Omega cm(2). The mechanism for the lower contact resistance is ascribed to enhanced tunneling transport due to large polarization-induced band bending at the surface as well as to the high hole concentration in p-type InGaN. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available