Electrical modeling of a pressure sensor MOSFET

This paper presents a simple and efficient analytical model of a MOS transistor-based pressure sensor. Starting from basic MOS equations, we derive a general relation between the gate transconductance and an equivalent gate capacitance that varies with pressure and whose definition represents a major improvement. Furthermore, such relation was found to be nearly independent of the MOS parameters and hence of the fabrication technology, in contrast with previous works. Results obtained with the present model are compared to two-dimensional (2D) simulations and model limitations are discussed in details. (C) 2001 Elsevier Science B.V. All rights reserved.