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JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 9, Pages 4587-4608Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1405826
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The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal-oxide-semiconductor structures is due to their large ionic polarizability. This is usually accompanied by the presence of soft optical phonons. We show that the long-range dipole field associated with the interface excitations resulting from these modes and from their coupling with surface plasmons, while small in the case of SiO2, for most high-kappa materials causes a reduction of the effective electron mobility in the inversion layer of the Si substrate. We study the dispersion of the interfacial coupled phonon-plasmon modes, their electron-scattering strength, and their effect on the electron mobility for Si-gate structures employing films of SiO2, Al2O3, AlN, ZrO2, HfO2, and ZrSiO4 for SiO2-equivalent thicknesses ranging from 5 to 0.5 nm. (C) 2001 American Institute of Physics.
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