In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

MOVPE-preparation of highly ordered InP(100) and GaP(100) surfaces was monitored with in-situ reflectance difference spectroscopy (RDS). Specific ordered P-terminated and ordered cation-terminated surface reconstructions were identified with specific structured RD spectra with the highest peaks. After contamination-free transfer of the samples to UHV, RDS measurements were performed also at 20 K. The experimental RD spectrum for the In-terminated, (2x4) reconstructed InP(100) surface shows a remarkable similarity to a recently published theoretical spectrum, whereas there is only moderate similarity between the experimental RD spectrum for the (2x4) reconstructed Ga-terminated GaP(100) surface and a recently proposed theoretical spectrum.