Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 40, Issue 11A, Pages L1145-L1147Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.L1145
Keywords
anodic oxidation; sacrificial oxidation; 6H-SiC; oxide film; electrolyte
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We formed oxide films on n-type 6H-SiC by an anodic oxidation method. As the electrolyte, a mixed solution of ethylene glycol, water and KNO3 was employed. By applying voltage with constant current to 6H-SiC, an oxide film was formed on the sample. The oxide was easily etched by HF. The formation rate for the anodic oxide was much higher than the typical thermal oxidation rate for 6H-SiC. By using this method for sacrificial oxidation before contact formation, Al ohmic contact resistance was reduced compared with those on an as-received surface.
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