Journal
IEEE ELECTRON DEVICE LETTERS
Volume 22, Issue 11, Pages 510-512Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.962646
Keywords
III-nitrides; power FETs; quantum wells; semiconductor device modeling
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We compare basic physical parameters of Al0.2Ga0.8N/GaN quantum well with In0.17Al0.83N/GaN and In0.17Al0.83N/In0.10Ga0.90N quantum well parameters, respectively. It is shown that in comparison to conventional AlGaN/GaN approach, structures based on InAIN/(In)GaN should exhibit two to three times higher quantum well polarization-induced charge. We use high electron mobility transistors (HEMT) analytical model to calculate InAIN/(In)GaN HEMTs drain currents and transconductances. A 3.3 A/mm and 2.2 A/mm drain current was calculated for In0.17Al0.83N/In0.10Ga(0.90)N and In0.17Al0.83N/GaN HEMTs, respectively. This represents up to 205% current increase if compared with AlGaN/GaN HEMT and a record power performance can be expected for new structures.
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