Journal
MATERIALS CHEMISTRY AND PHYSICS
Volume 72, Issue 2, Pages 258-263Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0254-0584(01)00448-5
Keywords
a-C : N; ECR-CVD; negative d.c. bias; optical properties
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Amorphous carbon nitride films have been synthesized on silicon using an electron-cyclotron-resonance chemical vapor deposition (ECR-CVD) system combined with a negative d.c. bias in a mixture Of C2H2,N-2 and Ar as precursors. The refractive index and extinction coefficient of the amorphous carbon nitride films were determined by the N&K analyzer. The optical band gap was derived according to Tauc's equation. The optical constants (n, k) and structural properties of the amorphous carbon nitride films were studied as a function of the substrate negative d.c. bias, ECR-power, flow rate ratio (N-2/C2H2), nitrogen to carbon ratio (N/C) by X-ray photoelectron spectroscopy (XPS), degree of graphitization (sp(2) content) by Raman spectroscopy and the radicals' density in the ECR-plasma by the optical emission spectrometer (OES). Through the relationship between OES measurements and the Raman studies with optical band gap, the result indicated that a progressive graphitization of the film occurs with increasing N2/C2H2, N/C, ECR-power and substrate negative d.c. bias. The optical constants (n, k) of the a-C:N films prove an unambiguous dependence of the optical band gap on the substrate negative d.c. bias for the ECR-power. (C) 2001 Elsevier Science B.V. All rights reserved.
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