Journal
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
Volume 81, Issue 11, Pages 1861-1878Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/13642810108223123
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Microcharacterization of defects is greatly facilitated with improvement in resolution. By improving temporal coherence (chromatic aberration) and compensating spatial incoherence, we have achieved the goal of the 1 Angstrom microscope (O AngstromM) project at the US Department of Energy's National Center for Electron Microscopy by extending the limits of high-resolution transmission electron microscopy to sub-angstrom levels. The O AngstromM combines focal-series image-processing software with a modified 300 keV electron microscope equipped with a highly coherent field emission electron gun. By operating at an 'alpha -null' value of underfocus in order to minimize the effects of spatial incoherence, and by reducing the O AngstromM's electron-gun extraction voltage to improve temporal coherence, we are able to transfer information below 0.8 Angstrom In a test specimen of silicon viewed in the [112] orientation in the O AngstromM we are able to 'see' atoms separated by only 0.78 Angstrom. Sub-angstrom resolution at this level offers the materials researcher an effective tool for the characterization of defects with unprecedented precision.
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