Journal
JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 9, Pages 4532-4542Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1405837
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Temperature dependent ac dielectric spectroscopy and room-temperature I-V characterization were performed on atomic layer deposited (Ta1-xNbx)(2)O-5 films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conduction mechanism in the mixed Ta-Nb oxide films was of the Poole-Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta-Nb oxides compared to pure Ta2O5 and Nb2O5 films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones. (C) 2001 American Institute of Physics.
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