4.7 Article

Propagation loss in single-mode GaAs-AlGaAs microring resonators: Measurement and model

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 19, Issue 11, Pages 1734-1739

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/50.964074

Keywords

integrated optics; microring resonators; propagation loss; semiconductor microresonators

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We report propagation loss measurements in single-mode GaAs-AlGaAs racetrack microresonators with bending radii from 2.7 mum to 9.7 mum. The experimental data were found to be in good agreement with a physical-loss model which accounts for the bending loss, the scattering loss due to surface roughness on the waveguide sidewalls, and the transition loss at the straight-to-bend waveguide junctions. The model also enables us to identify the dominant loss mechanisms in semiconductor microcavities. We found that for racetracks with large bending radii (greater than 4 mum, in our case) the loss due to surface-roughness scattering in the curved waveguides dominates, whereas for small-radius rings, the modal mismatch at the straight-to-bend waveguide junctions causes the biggest loss. This result suggests that circular-shaped rings are preferable in the realization of ultrasmall low-loss microcavities. We also show that the round-trip propagation loss in small-radius racetrack microresonators can be minimized by introducing a lateral offset at the straight-to-bend waveguide junctions.

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