Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 21, Pages 3512-3514Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1419235
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Size-induced lattice relaxation was observed for nanoscale CeO2 single crystals with an average size from 4 to 60 nm. Results showed the finest crystallites exhibited no strain-induced line broadening, while high temperature annealing resulted in larger grain sizes and significant strains. The observed shift in the x-ray diffraction lattice parameters was assumed to be due to the formation of defects on the lattice, specifically oxygen vacancies. Modeling revealed that the oxygen vacancy concentration ([V-O(. .)]) was found to be approximate to 4x10(20)/cm(3) for the 4 nm crystallites, and decreased two orders of magnitude for larger 60 nm single crystals. (C) 2001 American Institute of Physics.
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