Transition temperature of ferromagnetic semiconductors: A dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga1-xMnxAs which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T-c as a function of magnetic coupling strength J, carrier density n. and Mn density x. We find that T-c is determined by a subtle interplay between carrier density and magnetic coupling.