Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 40, Issue 12A, Pages L1305-L1307Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.L1305
Keywords
microstructure; SrRuO3 films; SrO buffer layers; high-resolution electron microscopy; interface
Categories
Ask authors/readers for more resources
Conductive SrRuO3 films were deposited on {001} Si substrates by pulsed-laser deposition using SrO as buffer layers. The microstructure and orientation relationships (ORs) of the constituting layers were investigated by X-ray diffraction, transn-dssion electron microscopy, hi.-h-resolution electron microscopy and energy dispersive X-ray spectroscopy. Good epitaxial growth of SrO and SrRuO3 films on the Si substrates was achieved. Multiple domains were formed in the SrRuO3 films. The domain boundaries were nearly perpendicular to the interface between the SrRuO3 films and the SrO buffer layers. Three ORs among Si, SrO and SrRuO3 were observed, indicating a new OR between Si and SrO.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available