Journal
JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 11, Pages 5778-5781Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1412574
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We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 mum are characterized. (C) 2001 American Institute of Physics.
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