Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 48, Issue 12, Pages 2830-2835Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.974711
Keywords
circuit testing; jitter; luminescence; picosecond imaging for circuit analysis (PICA); ring oscillator; single-photon avalanche-diode (SPAD); time correlated photon counting; ULSI
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Noninvasive characterization of CMOS ring oscillator with 50 ps resolution is obtained by exploiting the broad-band infrared emission from switching transistors. A fast silicon single-photon avalanche-diode (SPAD) is used to attain high sensitivity and time resolution. Switching transitions of both n- and p-channel MOSFETs are measured and the main features in the circuit operation are characterized. Systematic variations and increased jitter of switching transitions due to phase noise are accurately measured.
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