4.5 Article

Design and fabrication of submicrometer, single crystal Si accelerometer

Journal

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 10, Issue 4, Pages 518-524

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/84.967374

Keywords

accelerometer; deep etching; electron beam lithography; MEMS; silicon

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A lateral accelerometer has been designed, simulated, and fabricated using a 3-mask high-aspect ratio technology. Electron beam lithography and high-density plasma etching in an inductively coupled plasma source enabled aspect ratios > 30 to be achieved. This makes possible beams with very small spring constants. Combining the ability to measure very small displacement of a proof mass due to narrow capacitive gaps between comb fingers, a highly sensitive accelerometer can be obtained. The fabricated accelerometer with 1 mum beams and 0.2 mum comb gaps had a spring constant of 0.127 N/m, which is close to the calculated values of 0.146 N/m. Based on the capacitance measurements, the accelerometer sensitivity is calculated to be 6.3 Mg. Reducing the beam width to 0.4 mum lowered the spring constant to 0.03 N/m, and an improved equivalent sensitivity of 79.2 fF/g is calculated. The minimum detectable acceleration is on the order of a few microgravity over a range of hundreds of gravities.

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