Journal
PHYSICA B-CONDENSED MATTER
Volume 308, Issue -, Pages 1150-1152Publisher
ELSEVIER
DOI: 10.1016/S0921-4526(01)00922-X
Keywords
wide bandgap semiconductors; hardness; thermo-mechanical stability
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The hardness of single crystals alpha-SiC, AIN,. GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400degreesC. The hardness of SiC, AIN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AIN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200degreesC. A high thermo-mechanical stability for SiC. GaN and AIN is deduced. (C) 2001 Elsevier Science B.V. All rights reserved.
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