Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 23, Pages 3857-3859Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1421084
Keywords
-
Categories
Ask authors/readers for more resources
We have used low-energy electron microscopy to study spontaneous step formation in striped domains on ultraflat Si(001)-(2x1) surfaces during B2H6 exposure at elevated temperatures. We show that the size and arrangement of striped domains are kinetically limited, and propose that the limiting factor is the supply of diffusing Si surface adatoms. By adding controlled amounts of extra Si to ultraflat terraces, it is possible to foster the formation of very large (>5 mum) single-domain striped regions with adjustable stripe widths. (C) 2001 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available