Journal
APPLIED PHYSICS LETTERS
Volume 79, Issue 24, Pages 4031-4033Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1424477
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We have fabricated an aluminum single-electron transistor and characterized it at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the transistor is embedded. We measured the charge sensitivity of this radio-frequency single-electron transistor to be 3.2x10(-6) e/root Hz, which corresponds to the uncoupled energy sensitivity of 4.8 (h) over bar. Our measurements indicate that with further improvements, the radio-frequency single-electron transistor could reach the shot-noise limit estimated to be about 1 (h) over bar. (C) 2001 American Institute of Physics.
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