Journal
APPLIED SURFACE SCIENCE
Volume 184, Issue 1-4, Pages 340-345Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(01)00514-1
Keywords
depth profiling; ozone and thermal oxidation; silicate layer; SiC oxide interface; FET device
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The oxidation of 6H SiC(0001) surfaces is studied by high resolution photoelectron spectroscopy. We compare the oxides formed by HF dip, by room temperature treatment in ozone, and by thermal oxidation in air at 1000 degreesC, respectively. We find a stable intermediate layer in all investigated systems which differs from the bulk oxide that is stable up to 1200 degreesC. Our data suggest that the growth of the SiO2 layer proceeds via that intermediate silicate layer. (C) 2001 Published by Elsevier Science B.V.
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