Journal
JOURNAL OF APPLIED PHYSICS
Volume 90, Issue 12, Pages 6500-6504Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1417999
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The activation mechanism of Mg-doped GaN with Ni catalysts has been investigated by thermal desorption spectroscopy. It has been revealed that Ni deposited on Mg-doped GaN enhances the hydrogen recombination reaction at temperatures below 200 degreesC with the activation energy of 1.3 eV. The hydrogen desorbed at this temperature can be attributed to a part of the passivating hydrogen in GaN with a weak binding energy. The enhancement of the hydrogen recombination reaction on the GaN surface is essential to decreasing hydrogen concentration efficiently at low temperatures. (C) 2001 American Institute of Physics.
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