Significant strain dependence of piezoelectric constants in InxGa1-x/GaN quantum wells -: art. no. 241308

Using hydrostatic pressure to modify the strain in InxGa1-xN/GaN quantum wells we show an almost twofold increase of the built-in piezoelectric field in the wells from 1.4 MV/cm at atmospheric pressure to 2.6 MV/cm at 8.7 GPa. An analysis in terms of the total strain generated by the pressure suggests that the increase in the field arises from a significant dependence of the piezoelectric constants on strain.