Journal
PHYSICAL REVIEW B
Volume 64, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.64.241308
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Using hydrostatic pressure to modify the strain in InxGa1-xN/GaN quantum wells we show an almost twofold increase of the built-in piezoelectric field in the wells from 1.4 MV/cm at atmospheric pressure to 2.6 MV/cm at 8.7 GPa. An analysis in terms of the total strain generated by the pressure suggests that the increase in the field arises from a significant dependence of the piezoelectric constants on strain.
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