Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 1, Pages 94-96Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1430856
Keywords
-
Categories
Ask authors/readers for more resources
Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10(20) cm(-3) is achieved by Sb doping. A Sn0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available