Rutile-type oxide-diluted magnetic semiconductor:: Mn-doped SnO2

Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10(20) cm(-3) is achieved by Sb doping. A Sn0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K. (C) 2002 American Institute of Physics.