Journal
PHYSICAL REVIEW LETTERS
Volume 88, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.88.027204
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We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide p-n junction. In this (La0.9Ba0.1)MnO3/Nb doped SrTiO3 p-n junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from +1.0 to +1.8 V. The magnetoresistance can also be modulated electrically.
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