Growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As

We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs subtrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below similar to 30 K. exhibiting a strong maganeto-optical effect. The lattice constant of [(InyGa1-y)(1-x)Mn-x]As, A hose Mn concentration x is below 4%. is slightly smaller than that of InvGa1-v, As with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III-V opto-electronics.