Journal
ELECTRONICS LETTERS
Volume 38, Issue 2, Pages 91-92Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20020060
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Al0.3Ga0.7/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH3). The use of an AIN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility arc obtained in the channel. A device with 0.5 mum gate length has been realised exhibiting a maximum extrinsic transconductance of 160 ms/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show f(t) of 17 GHz and f(max) of 40 GHz.
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