Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 3, Pages 410-412Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1432444
Keywords
-
Categories
Ask authors/readers for more resources
Photoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an increase in paramagnetic boron of approximately the same magnitude as the decrease in the paramagnetic defect concentration. For T<80 K, both spectra remain unchanged after removing the light. Illumination with energy greater than 1.8 eV at 4 K increases the nitrogen, boron, and ID spectra simultaneously, but after blocking the light all three signals return to the pre-illumination level. A model based on excitation to and from the bandedges places the defect level 1.1+/-0.2 eV above the valence bandedge. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available