Journal
APPLIED PHYSICS LETTERS
Volume 80, Issue 3, Pages 446-448Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1436279
Keywords
-
Categories
Ask authors/readers for more resources
GaN metal-oxide-semiconductor (MOS) capacitors were fabricated by using Ga oxide formed by photoelectrochemical oxidation of GaN. The electrical properties of the MOS structures as characterized by capacitance-voltage measurement were found to be dependent on the oxidation time and posttreatment. Positive flatband voltage was observed in devices with thin oxide layers indicating the existence of negative oxide charge. Very thin oxide exhibits high capacitance and reverse leakage, which can be reduced by rapid thermal annealing (RTA). Passivation of the interface by RTA is partially responsible for the improvement. Thicker oxide layers exhibit improved electrical properties. Low density of interface states (similar to10(11) eV(-1) cm(-2)) was obtained in the Ga-oxide/GaN structure grown under optimized conditions. (C) 2002 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available