Journal
JOURNAL OF APPLIED PHYSICS
Volume 91, Issue 3, Pages 1572-1576Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1427136
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A quasi-stable threshold voltage (V-t) shift is imparted onto field-effect transistors (FETs) with organic semiconductors and polymer dielectrics. Adjustment of V-t from accumulation mode to zero or depletion mode is demonstrated for both p-channel and n-channel FETs, and is accomplished by applying a depletion voltage to the gate prior to device operation. Hydrophobic dielectrics and dopant-resistant semiconductors were advantageous. A pixel circuit that utilizes this nonvolatile memory element is proposed. (C) 2002 American Institute of Physics.
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